High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient
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- Wenbo Wang
- Zhejiang University and Cyrus Tang Centre for Sensor Materials and Applications 1 Department of Information Science and Electronic Engineering, , 38 Zheda Road, Hangzhou 310027, China
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- Patrick M. Mayrhofer
- Vienna University of Technology 2 Institute of Sensor and Actuator Systems, , Floragasse, 7/2/366-MST, A-1040 Vienna, Austria
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- Xingli He
- Zhejiang University and Cyrus Tang Centre for Sensor Materials and Applications 1 Department of Information Science and Electronic Engineering, , 38 Zheda Road, Hangzhou 310027, China
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- Manuel Gillinger
- Vienna University of Technology 2 Institute of Sensor and Actuator Systems, , Floragasse, 7/2/366-MST, A-1040 Vienna, Austria
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- Zhi Ye
- Zhejiang University and Cyrus Tang Centre for Sensor Materials and Applications 1 Department of Information Science and Electronic Engineering, , 38 Zheda Road, Hangzhou 310027, China
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- Xiaozhi Wang
- Zhejiang University and Cyrus Tang Centre for Sensor Materials and Applications 1 Department of Information Science and Electronic Engineering, , 38 Zheda Road, Hangzhou 310027, China
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- Achim Bittner
- Vienna University of Technology 2 Institute of Sensor and Actuator Systems, , Floragasse, 7/2/366-MST, A-1040 Vienna, Austria
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- Ulrich Schmid
- Vienna University of Technology 2 Institute of Sensor and Actuator Systems, , Floragasse, 7/2/366-MST, A-1040 Vienna, Austria
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- J. K. Luo
- University of Bolton 3 Institute of Renewable Energy Environmental Technology, , Deane Road, Bolton BL3 5AB, United Kingdom
書誌事項
- 公開日
- 2014-09-29
- DOI
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- 10.1063/1.4896853
- 公開者
- AIP Publishing
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説明
<jats:p>AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K2, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 105 (13), 2014-09-29
AIP Publishing