Importance of space-charge effects in resonant tunneling devices

DOI PDF 被引用文献6件
  • M. Cahay
    School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
  • M. McLennan
    School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
  • S. Datta
    School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
  • M. S. Lundstrom
    School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907

書誌事項

公開日
1987-03-09
DOI
  • 10.1063/1.98097
公開者
AIP Publishing

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説明

<jats:p>The consideration of space charge in the analysis of resonant tunneling devices leads to a substantial modification of the current-voltage relationship. The region of negative differential resistance (NDR) is shifted to a higher voltage, and broadened along the voltage axis. Moreover, the peak value of current prior to NDR is reduced, leading to a reduction in the predicted peak-to-valley ratio. An approach is presented to include space-charge effects, and a recently fabricated GaAs-AlxGa1−xAs structure is analyzed, to underscore the importance of a self-consistent electrostatic potential in theoretical calculations.</jats:p>

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