Diffusion barrier properties of Ti/TiN investigated by transmission electron microscopy

DOI PDF 被引用文献1件
  • M. Mändl
    Institut für Angewandte Physik, Universität Regensburg, D-8400 Regensburg, Federal Republic of Germany
  • H. Hoffmann
    Institut für Angewandte Physik, Universität Regensburg, D-8400 Regensburg, Federal Republic of Germany
  • P. Kücher
    Siemens Semiconductor Division, Munich, Federal Republic of Germany

書誌事項

公開日
1990-09-01
DOI
  • 10.1063/1.346568
公開者
AIP Publishing

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説明

<jats:p>Detailed analytical transmission electron microscopy investigations were performed on a well-known diffusion barrier system for very-large-scale integration metallization. It will be demonstrated that interfacial reactions are of great importance for the barrier mechanism. Both Ti and TiN act as diffusion barrier for the semiconductor and the metallization, respectively. For an aluminum-based metallization, TiN has a ‘‘spongelike’’ function due to its ability to absorb several amounts of aluminum at elevated temperatures and therefore inhibits diffusion towards the substrate. Ti acts for silicon as a compound forming barrier according to Nicolet’s classification [in Tungsten and Other Refractory Metals for Very Large Scale Integration Applications II, edited by E. K. Broadbent (Materials Research Society, Pittsburgh, 1987); pp. 19–26].</jats:p>

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