Optical properties of Si-doped GaN

DOI PDF 被引用文献15件
  • E. F. Schubert
    Center for Photonics Research and Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215
  • I. D. Goepfert
    Center for Photonics Research and Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215
  • W. Grieshaber
    Center for Photonics Research and Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215
  • J. M. Redwing
    ATMI, Danbury, Connecticut 06810

書誌事項

公開日
1997-08-18
DOI
  • 10.1063/1.119689
公開者
AIP Publishing

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説明

<jats:p>The optical properties of n-type GaN are investigated for Si doping concentrations ranging from 5×1016 to 7×1018 cm−3. The photoluminescence linewidth of the near-band gap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled in terms of potential fluctuations caused by the random distribution of donor impurities. Good agreement is found between experimental and theoretical results. The intensity of the near-band-gap transition increases monotonically as the doping concentration is increased indicating that nonradiative transitions dominate at a low doping density. The comparison of absorption, luminescence, reflectance, and photoreflectance measurements reveals the absence of a Stokes shift at room temperature demonstrating the intrinsic nature of the near-band edge transition.</jats:p>

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