Diffusion barrier properties of ZrN films in the Cu/Si contact systems

DOI PDF 被引用文献6件
  • Mayumi B. Takeyama
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami 090-8507, Japan
  • Atsushi Noya
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami 090-8507, Japan
  • Kouichirou Sakanishi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami 090-8507, Japan

書誌事項

公開日
2000-05-01
DOI
  • 10.1116/1.591382
公開者
American Vacuum Society

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説明

<jats:p>A thermally stable Cu/ZrN/Si contact system using a ZrN diffusion barrier of low resistivity was developed. In the contact system, the growth of an oriented ZrN(100) layer on Si(100), and subsequent growth of a Cu(110) layer on ZrN(100) were observed. The obtained contact system was fairly stable after annealing even at 750 °C for 1 h without any diffusion and/or reactions at either the interface of Cu/ZrN or ZrN/Si. It was revealed that the ZrN layer with low electrical resistivity showed a high performance as a diffusion barrier, and was one of the excellent materials for the use in ultralarge scale integration technology.</jats:p>

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