Comparison of Epitaxial Graphene Growth on Polar and Nonpolar 6H-SiC Faces: On the Growth of Multilayer Films
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- B. K. Daas
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
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- Sabih U. Omar
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
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- S. Shetu
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
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- Kevin M. Daniels
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
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- S. Ma
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
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- T. S. Sudarshan
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
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- M. V. S. Chandrashekhar
- Department of Electrical and Computer Engineering, University of South Carolina, 301 South Main Street, Columbia, South Carolina 29208, United States
書誌事項
- 公開日
- 2012-06-13
- DOI
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- 10.1021/cg300456v
- 公開者
- American Chemical Society (ACS)
この論文をさがす
収録刊行物
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- Crystal Growth & Design
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Crystal Growth & Design 12 (7), 3379-3387, 2012-06-13
American Chemical Society (ACS)

