Bright-blue electroluminescence from a silyl-substituted ter-(phenylene–vinylene) derivative

DOI PDF 被引用文献4件
  • Zhiqiang Gao
    Centre of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
  • C. S. Lee
    Centre of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
  • I. Bello
    Centre of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
  • S. T. Lee
    Centre of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
  • Ruey-Ming Chen
    Department of Chemistry, National Taiwan University, Taipei, Taiwan 106, Republic of China
  • Tien-Yau Luh
    Department of Chemistry, National Taiwan University, Taipei, Taiwan 106, Republic of China
  • J. Shi
    Display Technology Laboratory, Eastman Kodak Company, Rochester, New York 14650-2110
  • C. W. Tang
    Display Technology Laboratory, Eastman Kodak Company, Rochester, New York 14650-2110

書誌事項

公開日
1999-02-08
DOI
  • 10.1063/1.123392
公開者
AIP Publishing

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説明

<jats:p>A bright-blue electroluminescent device has been fabricated by using an emissive dopant and an electron-transporting host. The dopant was a highly photoluminescent silyl-substituted ter-(phenylene–vinylene) derivative [1,4-bis[4-(2-trimethylsilylvinly) styryl]-2,5-dibutoxybenzene (BTSB)]. BTSB was doped into a trimer of N-arylbenzimidazoles (TPBI) which functioned as the host and electron transporter. N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine (NPB) was used as the hole transporter. The device, with a structure of indium tin oxide\NPB\TPBI:10%BTSB\TPBI\Mg:Ag, shows a bright blue emission of 11000 cd/m2 at a current density of 360 mA/cm2. The current efficiency of this device is about 3.2 cd/A at 20 mA/cm2.</jats:p>

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