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- Min Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Liangcai Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Feng Rao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Kun Ren
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Xinglong Ji
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Sannian Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Dongning Yao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
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- Songlin Feng
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China
書誌事項
- 公開日
- 2014-02-03
- DOI
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- 10.1063/1.4863430
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Compared with pure Sb2Te3, Ti0.32Sb2Te3 (TST) phase change material has larger resistance ratio, higher crystallization temperature and better thermal stability. The sharp decrease in mobility is responsible for the increasing amorphous and crystalline sheet resistance. The uniform crystalline structure of TST film is very benefit for the endurance characteristic. The Set and Reset operation voltages for TST-based phase change memory device are much lower than those of conventional Ge2Sb2Te5-based one. Remarkably, the device presents extremely rapid Set operation speed (∼6 ns). Furthermore, up to 1 × 106 programming cycles are obtained with stable Set and Reset resistances.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 104 (5), 2014-02-03
AIP Publishing