Deposition of device quality, low <i>H</i> content amorphous silicon

DOI PDF 被引用文献19件
  • A. H. Mahan
    Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401-3393
  • J. Carapella
    Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401-3393
  • B. P. Nelson
    Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401-3393
  • R. S. Crandall
    Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401-3393
  • I. Balberg
    Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel

書誌事項

公開日
1991-05-01
DOI
  • 10.1063/1.348897
公開者
AIP Publishing

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説明

<jats:p>Device-quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.</jats:p>

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