Strain-induced polarization in wurtzite III-nitride semipolar layers

DOI PDF 被引用文献62件
  • A. E. Romanov
    Materials Department, University of California, Santa Barbara, California 93106
  • T. J. Baker
    Materials Department, University of California, Santa Barbara, California 93106
  • S. Nakamura
    Materials Department, University of California, Santa Barbara, California 93106
  • J. S. Speck
    Materials Department, University of California, Santa Barbara, California 93106

書誌事項

公開日
2006-07-15
DOI
  • 10.1063/1.2218385
公開者
AIP Publishing

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説明

<jats:p>This paper presents growth orientation dependence of the piezoelectric polarization of InxGa1−xN and AlyGa1−yN layers lattice matched to GaN. This topic has become relevant with the advent of growing nitride based devices on semipolar planes [A. Chakraborty et al., Jpn. J. Appl. Phys., Part 2 44, L945 (2005)]. The calculations demonstrate that for strained InxGa1−xN and AlyGa1−yN layers lattice matched to GaN, the piezoelectric polarization becomes zero for nonpolar orientations and also at another point ≈45° tilted from the c plane. The zero crossover has only a very small dependence on the In or Al content of the ternary alloy layer. With the addition of spontaneous polarization, the angle at which the total polarization equals zero increases slightly for InxGa1−xN, but the exact value depends on the In content. For AlyGa1−yN mismatched layers the effect of spontaneous polarization becomes important by increasing the crossover point to ∼70° from c-axis oriented films. These calculations were performed using the most recent and convincing values for the piezoelectric and elasticity constants, and applying Vegard’s law to estimate the constants in the ternary InxGa1−xN and AlyGa1−yN layers.</jats:p>

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