Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier
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- Sumito Tsunegi
- Tohoku University 1 Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Sendai 980-8579, Japan
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- Yuya Sakuraba
- Tohoku University 2 Institute for Materials Research, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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- Mikihiko Oogane
- Tohoku University 1 Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Sendai 980-8579, Japan
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- Koki Takanashi
- Tohoku University 2 Institute for Materials Research, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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- Yasuo Ando
- Tohoku University 1 Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Sendai 980-8579, Japan
説明
<jats:p>A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 93 (11), 112506-, 2008-09-15
AIP Publishing
