Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition
-
- Dong Yeong Kim
- Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , Pohang 37673, South Korea
-
- Nam Han
- Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , Pohang 37673, South Korea
-
- Hokyeong Jeong
- Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , Pohang 37673, South Korea
-
- Jaewon Kim
- Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , Pohang 37673, South Korea
-
- Sunyong Hwang
- Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , Pohang 37673, South Korea
-
- Jong Kyu Kim
- Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , Pohang 37673, South Korea
説明
<jats:p>Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2). Structural, optical and electrical properties of the MOCVD-grown h-BN films were systematically investigated by various spectroscopic analyses and electrical conduction measurement. Based on the experimental findings including narrower X-ray photoelectron spectra, reduced intensity of the shoulder peaks in near edge X-ray absorption fine structure spectra, and decreased electrical conduction by more than three orders of magnitude when H2 carrier gas is employed, it was concluded that H2 has an advantage over N2 as the carrier gas for MOCVD growth of h-BN which is attributed to the healing of crystalline defects by etching and regrowth processes occurring under the pulsed source-injection mode.</jats:p>
収録刊行物
-
- AIP Advances
-
AIP Advances 7 (4), 045116-, 2017-04-01
AIP Publishing