Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

C. Y. Jin, H. Y. Liu, S. Y. Zhang, Q. Jiang, S. L. Liew, M. Hopkinson, T. J. Badcock, E. Nabavi, D. J. Mowbray

doi:10.1063/1.2752778

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

DOI PDF 被引用文献2件

C. Y. Jin

University of Sheffield Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, , Sheffield S1 3JD, United Kingdom
H. Y. Liu

University of Sheffield Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, , Sheffield S1 3JD, United Kingdom
S. Y. Zhang

University of Sheffield Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, , Sheffield S1 3JD, United Kingdom
Q. Jiang

University of Sheffield Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, , Sheffield S1 3JD, United Kingdom
S. L. Liew

University of Sheffield Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, , Sheffield S1 3JD, United Kingdom
M. Hopkinson

University of Sheffield Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, , Sheffield S1 3JD, United Kingdom
T. J. Badcock

University of Sheffield Department of Physics and Astronomy, , Sheffield S3 7RH, United Kingdom
E. Nabavi

University of Sheffield Department of Physics and Astronomy, , Sheffield S3 7RH, United Kingdom
D. J. Mowbray

University of Sheffield Department of Physics and Astronomy, , Sheffield S3 7RH, United Kingdom

書誌事項

公開日: 2007-07-09

DOI

10.1063/1.2752778

公開者: AIP Publishing

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説明

<jats:p>The excitation power dependence of the ground and excited state transitions in type-II InAs-GaAs0.78Sb0.22 quantum dot structure has been studied. Both transitions exhibit a strong blueshift with increasing excitation power but their separation remains constant. This behavior indicates a carrier-induced electric field oriented predominantly along the growth axis, which requires the holes to be localized in the GaAsSb above quantum dots. An accelerated blueshift of the ground state emission is observed once the excited state in the dots starts to populate. This behavior can be explained by a smaller spontaneous recombination coefficient for the excited state transition.</jats:p>