Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures

DOI PDF 被引用文献19件
  • S. V. Karthik
    National Institute for Materials Science (NIMS) 1 , 1-2-1 Sengen, Tsukuba 305-0047, Japan
  • Y. K. Takahashi
    National Institute for Materials Science (NIMS) 1 , 1-2-1 Sengen, Tsukuba 305-0047, Japan
  • T. Ohkubo
    National Institute for Materials Science (NIMS) 1 , 1-2-1 Sengen, Tsukuba 305-0047, Japan
  • K. Hono
    National Institute for Materials Science (NIMS) 1 , 1-2-1 Sengen, Tsukuba 305-0047, Japan
  • S. Ikeda
    Tohoku University 2 Research Institute of Electrical Communication, , Sendai 980-8577, Japan
  • H. Ohno
    Tohoku University 2 Research Institute of Electrical Communication, , Sendai 980-8577, Japan

書誌事項

公開日
2009-07-15
DOI
  • 10.1063/1.3182817
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We have investigated the microstructure and local chemistry of Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru magnetic tunnel junctions with different values of tunneling magnetoresistance (TMR) as a result of annealing at different temperatures. Annealing at 500 °C led to the templated crystallization of the amorphous CoFeB layer having coherent interfaces with MgO grains with an orientation relationship of ⟨001⟩[011]MgO∥⟨001⟩[001]CoFe, and the B rejected from crystallized CoFeB was found to be dissolved in upper amorphous Ta layers and segregated in the bottom crystalline Ta layer. Annealing at 600 °C led to the dissolution of 3–4 at. % Ta in the MgO barrier, and B was found to be segregated at the CoFeB/MgO and Ta/Ru interfaces as a result of the crystallization of the top amorphous Ta layer. Further degradation in TMR of the samples annealed at 650 °C results from the loss of bcc-CoFe (001) texture in the bottom CoFeB electrode due to the pronounced Ta diffusion into the CoFe/MgO/CoFe layers.</jats:p>

収録刊行物

被引用文献 (19)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ