Oxidation Kinetics of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen

Elizabeth J. Opila

doi:10.1111/j.1151-2916.1994.tb05357.x

Oxidation Kinetics of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen

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Elizabeth J. Opila

書誌事項

公開日: 1994-03

権利情報

http://onlinelibrary.wiley.com/termsAndConditions#vor

DOI

10.1111/j.1151-2916.1994.tb05357.x

公開者: Wiley

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説明

<jats:p> The oxidation kinetics of chemically vapor‐deposited SiC in dry oxygen and wet oxygen ( <jats:italic>P</jats:italic> <jats:sub>H2O</jats:sub> = 0.1 atm) at temperatures between 1200° and 1400°C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high‐purity Al <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino‐silicate scales. </jats:p>