Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc oxide grown by magnetron sputtering
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- B. Yao
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- D. Z. Shen
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- Z. Z. Zhang
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- X. H. Wang
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- Z. P. Wei
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- B. H. Li
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- Y. M. Lv
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- X. W. Fan
- Changchun Institute of Optics Key Laboratory of Excited State Processes, , Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China
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- L. X. Guan
- Jilin University Department of Physics, , Changchun 130023, People’s Republic of China
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- G. Z. Xing
- Jilin University Department of Physics, , Changchun 130023, People’s Republic of China
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- C. X. Cong
- Jilin University Department of Physics, , Changchun 130023, People’s Republic of China
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- Y. P. Xie
- Jilin University Department of Physics, , Changchun 130023, People’s Republic of China
書誌事項
- 公開日
- 2006-06-15
- DOI
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- 10.1063/1.2208414
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A yellow-orange nitrogen-doped zinc oxide (ZnO:N) film was deposited on a quartz glass substrate at 510K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The lattice constants of the as-grown ZnO:N are much larger than those of undoped ZnO, and decrease with increasing annealing temperature due to escape of the nitrogen from the ZnO:N and decrease of tensile stress, accompanied with color change from yellow-orange to pale yellow. The nitrogen occupies two chemical environments in the ZnO:N based on x-ray photoelectron spectroscopy measurement. One is NO acceptor formed by substitution of N atom for O sublattice, and another is (N2)O double donors produced by substitution of N molecular for O site, which make the lattice constants expanded. The as-grown ZnO:N film shows insulating, but behaves p-type conduction in the dark after annealed at 863K for 1h under 10−3Pa. Unfortunately, the p-type conduction is not stable and reverts to n type soon. However, after illuminated by sunlight for several minutes, the n-type ZnO:N transforms into p type again. The mechanism of the transformation of the conductivity behavior is discussed in the present work.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 99 (12), 123510-, 2006-06-15
AIP Publishing