Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
-
- N. Alves
- Bangor University School of Electronic Engineering, , Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom
-
- D. M. Taylor
- Bangor University School of Electronic Engineering, , Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom
書誌事項
- 公開日
- 2008-03-10
- DOI
-
- 10.1063/1.2897238
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90°C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from ∼20×1010to5×1010cm−2eV−1 over an energy range extending from 0.05to0.25eV above the bulk Fermi level.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 92 (10), 103312-, 2008-03-10
AIP Publishing
