Structural study of defects induced during current injection to II–VI blue light emitter

DOI PDF 被引用文献1件
  • S. Tomiya
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
  • E. Morita
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
  • M. Ukita
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
  • H. Okuyama
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
  • S. Itoh
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
  • K. Nakano
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
  • A. Ishibashi
    Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan

書誌事項

公開日
1995-03-06
DOI
  • 10.1063/1.113238
公開者
AIP Publishing

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説明

<jats:p>We have carried out structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy-based II–VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy. The nonradiative regions, which spread out in the 〈100〉 direction during current injection, consist of a high density of dislocation dipoles and dislocation loops. The source of these defects is the preexisting stacking faults originating at the substrate/epilayer interface. The dipoles themselves are aligned along both of the 〈110〉 directions lying in the {111} plane. Their Burgers vectors were of the type (a/2)〈011〉 inclined at 45° to the (001) junction plane.</jats:p>

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