Interferometric measurements of electric field-induced displacements in piezoelectric thin films

  • A. L. Kholkin
    Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
  • Ch. Wütchrich
    Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
  • D. V. Taylor
    Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
  • N. Setter
    Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

書誌事項

公開日
1996-05-01
DOI
  • 10.1063/1.1147000
公開者
AIP Publishing

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説明

<jats:p>Interferometric measurements of electric field-induced displacements in piezoelectric thin films using single-beam and double-beam optical detection schemes are reported. It is shown that vibrational response measured with a single-beam interferometer includes a large contribution of the bending motion of substrate. Therefore, it is difficult to apply single-beam technique for piezoelectric measurements in thin films. To suppress the bending effect a high-resolution double-beam interferometer is proposed. The sensitivity of the interferometer is significantly improved in comparison with previously reported system. The interferometer is shown to resolve small displacements without using a lock-in technique. An example of the interferometric capabilities is demonstrated with experimental results on electric field, frequency, and time dependences of piezoelectric response for quartz and Pb(Zr,Ti)O3 thin film.</jats:p>

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