Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature
書誌事項
- 公開日
- 2013-02
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/j.matlet.2012.10.083
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract We study nitrogen (N) doping in cuprous oxide (Cu2O) films by radical oxidation of Cu films at low temperature (500 °C). The morphological, crystal, and optoelectronic properties of the Cu2O have been investigated by different N2 plasma treatment times. X-ray diffraction measurements show that Cu2O thin films grow on c-sapphire substrate with preferred (111) orientation. With increasing N2 plasma treatment time from 0 to 40 min, the optical bandgap energy is increased from 1.69 to 2.42 eV with p-type conductivity. From the Hall measurements, it is found that the hole density is increased from 1014 to 1015 cm−3 and the resistivity is decreased from 1879 to 780 Ω cm after N2 plasma treatment.
収録刊行物
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- Materials Letters
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Materials Letters 92 188-191, 2013-02
Elsevier BV
