Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration
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- Minh A. Tran
- Electrical and Computer Engineering Department, University of California, Santa Barbara 1 , Santa Barbara, California 93106, USA
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- Duanni Huang
- Electrical and Computer Engineering Department, University of California, Santa Barbara 1 , Santa Barbara, California 93106, USA
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- John E. Bowers
- Electrical and Computer Engineering Department, University of California, Santa Barbara 1 , Santa Barbara, California 93106, USA
書誌事項
- 公開日
- 2019-11-01
- 権利情報
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- https://creativecommons.org/licenses/by/4.0/
- https://creativecommons.org/licenses/by/4.0/
- DOI
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- 10.1063/1.5124254
- 公開者
- AIP Publishing
説明
<jats:p>Narrow linewidth lasers have many applications, such as higher order coherent communications, optical sensing, and metrology. While semiconductor lasers are typically unsuitable for such applications due to relatively low coherence, recent advances in heterogeneous integration of III-V with silicon have shown that this is no longer true. In this tutorial, we discuss in-depth techniques that are used to drastically reduce the linewidth of a laser. The heterogeneous silicon-III/V platform can fully utilize these techniques, and fully integrated lasers with Lorentzian linewidth on the order of 100 Hz and tuning range of 120 nm are shown.</jats:p>
収録刊行物
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- APL Photonics
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APL Photonics 4 (11), 2019-11-01
AIP Publishing