Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3∕SrTi0.99Nb0.01O3 p-n heterojunctions
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- F. Y. Bruno
- Universidad Complutense de Madrid 1 GFMC, Departamento Fisica Aplicada III, , 28040 Madrid, Spain
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- J. Garcia-Barriocanal
- Universidad Complutense de Madrid 1 GFMC, Departamento Fisica Aplicada III, , 28040 Madrid, Spain
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- M. Torija
- University of Minnesota 2 Department of Chemical Engineering and Materials Science, , Minneapolis, Minnesota 55455, USA
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- A. Rivera
- Universidad Complutense de Madrid 1 GFMC, Departamento Fisica Aplicada III, , 28040 Madrid, Spain
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- Z. Sefrioui
- Universidad Complutense de Madrid 1 GFMC, Departamento Fisica Aplicada III, , 28040 Madrid, Spain
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- C. Leighton
- University of Minnesota 2 Department of Chemical Engineering and Materials Science, , Minneapolis, Minnesota 55455, USA
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- C. Leon
- Universidad Complutense de Madrid 1 GFMC, Departamento Fisica Aplicada III, , 28040 Madrid, Spain
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- J. Santamaria
- Universidad Complutense de Madrid 1 GFMC, Departamento Fisica Aplicada III, , 28040 Madrid, Spain
書誌事項
- 公開日
- 2008-02-25
- DOI
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- 10.1063/1.2887905
- 公開者
- AIP Publishing
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説明
<jats:p>Electrical transport properties of heteroepitaxial p-n junctions made of La0.8Sr0.2CoO3 and SrTi0.99Nb0.01O3 were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 92 (8), 082106-, 2008-02-25
AIP Publishing