Size dependence of III-nitride microdisk light-emitting diode characteristics

  • S. X. Jin
    Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
  • J. Shakya
    Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
  • J. Y. Lin
    Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
  • H. X. Jiang
    Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601

書誌事項

公開日
2001-05-28
DOI
  • 10.1063/1.1376152
公開者
AIP Publishing

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説明

<jats:p>Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I–V and L–I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications.</jats:p>

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