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- S. X. Jin
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
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- J. Shakya
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
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- J. Y. Lin
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
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- H. X. Jiang
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
書誌事項
- 公開日
- 2001-05-28
- DOI
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- 10.1063/1.1376152
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I–V and L–I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 78 (22), 3532-3534, 2001-05-28
AIP Publishing