Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis
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- Xiao Meng
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Lai Wang
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Zhibiao Hao
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Yi Luo
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Changzheng Sun
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Yanjun Han
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Bing Xiong
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Jian Wang
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
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- Hongtao Li
- Tsinghua University Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, , Beijing 100084, China
説明
<jats:p>Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 108 (1), 013501-, 2016-01-04
AIP Publishing