In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
書誌事項
- 公開日
- 2002-05
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0921-5107(02)00021-1
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract We found that the mass transport of GaN occurs at around 1100 °C under NH 3 -containing atmosphere if a trench is artificially formed, while that of Al 0.1 Ga 0.9 N does not. This different behavior of these two materials was utilized in the fabrication of an in-plane periodical GaN/AlGaN structure. Periodical trenches were formed on the surface of a GaN/Al 0.1 Ga 0.9 N heterostructure, the depth of which reached the bottom of the Al 0.1 Ga 0.9 N layer. After annealing for 60 min, all the GaN on the terrace surface was selectively transported into the trenches, and then the flat surface of the underlying Al 0.1 Ga 0.9 N was exposed. Thus, an in-plane periodical GaN/Al 0.1 Ga 0.9 N grating was formed. This grating was characterized by micro-photoluminescence mapping.
収録刊行物
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- Materials Science and Engineering: B
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Materials Science and Engineering: B 93 (1-3), 139-142, 2002-05
Elsevier BV