Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

DOI PDF 被引用文献5件
  • S. Maimon
    Department of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel
  • E. Finkman
    Department of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel
  • G. Bahir
    Department of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel
  • S. E. Schacham
    Department of Electrical and Electronic Engineering, College of Judea and Samaria, Ariel 44837, Israel
  • J. M. Garcia
    Center for Quantized Electronic Structures (QUEST) and Materials Department, University of California, Santa Barbara, California 93106
  • P. M. Petroff
    Center for Quantized Electronic Structures (QUEST) and Materials Department, University of California, Santa Barbara, California 93106

説明

<jats:p>Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate.</jats:p>

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