Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
-
- S. Starschich
- RWTH Aachen University 1 Institut für Werkstoffe der Elektrotechnik 2, , Sommerfeldstraße 24, D-52074 Aachen, Germany
-
- D. Griesche
- RWTH Aachen University 1 Institut für Werkstoffe der Elektrotechnik 2, , Sommerfeldstraße 24, D-52074 Aachen, Germany
-
- T. Schneller
- RWTH Aachen University 1 Institut für Werkstoffe der Elektrotechnik 2, , Sommerfeldstraße 24, D-52074 Aachen, Germany
-
- R. Waser
- RWTH Aachen University 1 Institut für Werkstoffe der Elektrotechnik 2, , Sommerfeldstraße 24, D-52074 Aachen, Germany
-
- U. Böttger
- RWTH Aachen University 1 Institut für Werkstoffe der Elektrotechnik 2, , Sommerfeldstraße 24, D-52074 Aachen, Germany
書誌事項
- 公開日
- 2014-05-19
- DOI
-
- 10.1063/1.4879283
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm2. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 104 (20), 202903-, 2014-05-19
AIP Publishing