Effect of humidity and temperature on the fatigue behavior of polysilicon thin film
書誌事項
- 公開日
- 2011-11
- 権利情報
-
- https://www.elsevier.com/tdm/userlicense/1.0/
- https://www.elsevier.com/legal/tdmrep-license
- https://doi.org/10.15223/policy-017
- https://doi.org/10.15223/policy-037
- https://doi.org/10.15223/policy-012
- https://doi.org/10.15223/policy-029
- https://doi.org/10.15223/policy-004
- DOI
-
- 10.1016/j.sna.2011.06.007
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract The fatigue behavior of polysilicon thin films was investigated under three different environmental conditions, i.e., air with relative humidity 80% at 22 °C, inert nitrogen gas at 22 °C and 180 °C. A new evaluation technique was utilized, where the experiment applying a stress amplitude gradually increased with the number of fatigue cycles was combined with a statistical analysis using an equivalent fatigue crack extension model on the basis of Paris’ well-known law. The parameter values in Paris’ law for relative humidity 80% to control fatigue behavior were found to lie close to those obtained previously with conventional fatigue tests with constant stress amplitudes, when a sufficiently slow increasing rate of stress amplitude was applied. The fracture stress level appeared to be smaller than the static strength even in nitrogen gas at 22 °C, which suggested that fatigue damage was introduced by repeated loading even under an inert environment. Fatigue damage was observed to be more significant at a higher temperature (180 °C) in the same nitrogen gas atmosphere, which is an evidence of the contribution of intrinsic defects on the fatigue behavior.
収録刊行物
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- Sensors and Actuators A: Physical
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Sensors and Actuators A: Physical 170 (1-2), 187-195, 2011-11
Elsevier BV
