Nanostenciling through a cm2-wide silicon membrane

DOI PDF 被引用文献1件
  • Vincent Blech
    University of Tokyo Institute of Industrial Science, , LIMMS/CNRS-IIS 4-6-1, Komaba Meguro-Ku, 153-8505 Tokyo, Japan
  • Takama Nobuyuki
    University of Tokyo Institute of Industrial Science, , LIMMS/CNRS-IIS 4-6-1, Komaba Meguro-Ku, 153-8505 Tokyo, Japan
  • Beomjoon Kim
    University of Tokyo Institute of Industrial Science, , LIMMS/CNRS-IIS 4-6-1, Komaba Meguro-Ku, 153-8505 Tokyo, Japan

書誌事項

公開日
2006-01-01
DOI
  • 10.1116/1.2140001
公開者
American Vacuum Society

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説明

<jats:p>Nanostenciling is an area-selective technique for patterning surfaces in a single step, by depositing material through a shadow mask. In this article, we propose a cost-efficient technique for the fabrication of a cm2-scale stencil mask with the help of conventional photolithography and wet anisotropic etching. The mask consists of a freely suspended silicon membrane, with micro- and nanoscale apertures. Well-defined Au and Al patterns were transferred onto Si and SiO2∕Si substrates. Issues such as the geometry of the evaporation setup and the surface diffusion of evaporated atoms are discussed.</jats:p>

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