1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

DOI PDF 被引用文献9件
  • O. B. Shchekin
    Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084
  • D. G. Deppe
    Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084

書誌事項

公開日
2002-05-06
DOI
  • 10.1063/1.1476708
公開者
AIP Publishing

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説明

<jats:p>Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 μm InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 °C. 1.3 μm ground state lasing is obtained up to a temperature of 167 °C.</jats:p>

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