Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy

DOI PDF 被引用文献5件
  • J. Stimmer
    Walter Schottky Institut, TU München, Am Coulombwall, D-85748 Garching, Germany
  • A. Reittinger
    Walter Schottky Institut, TU München, Am Coulombwall, D-85748 Garching, Germany
  • J. F. Nützel
    Walter Schottky Institut, TU München, Am Coulombwall, D-85748 Garching, Germany
  • G. Abstreiter
    Walter Schottky Institut, TU München, Am Coulombwall, D-85748 Garching, Germany
  • H. Holzbrecher
    ZCH, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
  • Ch. Buchal
    ISI 2, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany

書誌事項

公開日
1996-06-03
DOI
  • 10.1063/1.116577
公開者
AIP Publishing

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説明

<jats:p>We have fabricated erbium–oxygen-doped silicon light emitting diodes with molecular beam epitaxy by simultaneously evaporating erbium and silicon and providing a suitable background pressure of oxygen. In reverse bias, the diodes show intense room-temperature electroluminescence at λ=1.54 μm, originating from the intra-4f transition of erbium. This luminescence does not show temperature quenching between 4 and 300 K. In forward bias the erbium peak intensity is reduced by a factor of 30 at low temperatures and shows temperature quenching.</jats:p>

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