Heat of crystallization and melting point of amorphous silicon
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- E. P. Donovan
- Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
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- F. Spaepen
- Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
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- D. Turnbull
- Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
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- J. M. Poate
- Bell Laboratories, Murray Hill, New Jersey 07974
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- D. C. Jacobson
- Bell Laboratories, Murray Hill, New Jersey 07974
Description
<jats:p>Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of (100) substrates held at 77 K. Rutherford backscattering and channeling, and differential scanning calorimetry were used to measure the heat of crystallization, ΔHac, to be 11.9±0.7 kJ/mol, substantially less than the value predicted by scaling ΔHac of a-Ge. The crystal growth velocity is found to have the form v=v0 exp(−2.24 eV/kT). We obtain a new estimate, 1420 K, for the melting temperature of a-Si.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 42 (8), 698-700, 1983-04-15
AIP Publishing
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Details 詳細情報について
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- CRID
- 1361699996114888192
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- DOI
- 10.1063/1.94077
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- ISSN
- 10773118
- 00036951
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- Data Source
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- Crossref