Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonators
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- Ramin Matloub
- Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland
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- Alvaro Artieda
- Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland
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- Cosmin Sandu
- Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland
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- Evgeny Milyutin
- Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland
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- Paul Muralt
- Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland
書誌事項
- 公開日
- 2011-08-29
- DOI
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- 10.1063/1.3629773
- 公開者
- AIP Publishing
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説明
<jats:p>AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors kt2 obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy target. They grew in the piezoelectric wurtzite phase with a similar microstructure as pure AlN films. The clamped d33,f increased considerably from 5.1 to 7.8 pm/V. The admittance measured at thin film bulk acoustic wave resonators was fitted to an equivalent circuit model and to 2-dimensional finite element simulation, yielding a kt2 of 7.3% and a quality factor of 650. The material softens considerably.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 99 (9), 092903-, 2011-08-29
AIP Publishing