Three-dimensional simulation of an inductively coupled plasma reactor

DOI PDF 被引用文献2件
  • Theodoros Panagopoulos
    Plasma Processing Laboratory, Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4004
  • Doosik Kim
    Plasma Processing Laboratory, Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4004
  • Vikas Midha
    Plasma Processing Laboratory, Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4004
  • Demetre J. Economou
    Plasma Processing Laboratory, Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4004

書誌事項

公開日
2002-03-01
DOI
  • 10.1063/1.1448673
公開者
AIP Publishing

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説明

<jats:p>A three-dimensional finite element fluid model and a corresponding simulation tool have been developed for studying azimuthal asymmetries and their effect on etch uniformity in inductively coupled plasma (ICP) reactors. For silicon etching with chlorine in an ICP reactor with a planar coil, four different cases were examined: (a) uniform power deposition without a focus ring, (b) uniform power deposition with a focus ring, (c) nonuniform power deposition without a focus ring, and (d) nonuniform power deposition with a focus ring. When etching is ion driven, the power deposition profile is most important for etch uniformity, because azimuthal nonuniformities in the ion production rate can persist even down to the wafer level. For uniform power deposition, the effect of asymmetric pumping becomes more important. A focus ring can play an important role in alleviating azimuthal nonuniformities, especially in the nonuniform power deposition cases. Gas inlets pointing parallel to the wafer plane introduce only local disturbances in the species profiles.</jats:p>

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