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- Nicholas A. Melosh
- California Nanosystems Institute, University of California, Box 956905, Los Angeles, CA 90095, USA.
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- Akram Boukai
- California Nanosystems Institute, University of California, Box 956905, Los Angeles, CA 90095, USA.
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- Frederic Diana
- California Nanosystems Institute, University of California, Santa Barbara, CA 93106, USA.
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- Brian Gerardot
- California Nanosystems Institute, University of California, Santa Barbara, CA 93106, USA.
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- Antonio Badolato
- California Nanosystems Institute, University of California, Santa Barbara, CA 93106, USA.
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- Pierre M. Petroff
- California Nanosystems Institute, University of California, Santa Barbara, CA 93106, USA.
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- James R. Heath
- California Nanosystems Institute, University of California, Box 956905, Los Angeles, CA 90095, USA.
書誌事項
- 公開日
- 2003-04-04
- DOI
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- 10.1126/science.1081940
- 公開者
- American Association for the Advancement of Science (AAAS)
この論文をさがす
説明
<jats:p> We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits. The technique is based on translating thin film growth thickness control into planar wire arrays. Nanowires were fabricated with diameters and pitches (center-to-center distances) as small as 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 10 <jats:sup>6</jats:sup> ), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 10 <jats:sup>11</jats:sup> per square centimeter. The nanowires can also be used in nanomechanical devices; a high-frequency nanomechanical resonator is demonstrated. </jats:p>
収録刊行物
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- Science
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Science 300 (5616), 112-115, 2003-04-04
American Association for the Advancement of Science (AAAS)