Common-emitter current–voltage characteristics of a <i>Pnp</i> AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

DOI PDF 被引用文献2件
  • Kazuhide Kumakura
    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi Kanagawa 243-0198, Japan
  • Toshiki Makimoto
    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi Kanagawa 243-0198, Japan
  • Naoki Kobayashi
    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi Kanagawa 243-0198, Japan

書誌事項

公開日
2002-05-20
DOI
  • 10.1063/1.1480102
公開者
AIP Publishing

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<jats:p>We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current–voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019 cm−3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current–voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of −2×10−5 A at room temperature.</jats:p>

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