Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells

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  • Yimao Wan
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • Chris Samundsett
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • James Bullock
    Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA
  • Mark Hettick
    Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA
  • Thomas Allen
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • Di Yan
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • Jun Peng
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • Yiliang Wu
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • Jie Cui
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia
  • Ali Javey
    Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA
  • Andres Cuevas
    Research School of Engineering The Australian National University (ANU) Canberra ACT 0200 Australia

書誌事項

公開日
2016-11-16
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#am
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/aenm.201601863
公開者
Wiley

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<jats:p>A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi‐level pinning effect and has hindered the development of n‐type c‐Si solar cells, while its p‐type counterparts have been commercialized for several decades, typically utilizing aluminium alloys in full‐area, and more recently, partial‐area rear contact configurations. Here the authors demonstrate a highly conductive and thermally stable electrode composed of a magnesium oxide/aluminium (MgO<jats:italic><jats:sub>x</jats:sub></jats:italic>/Al) contact, achieving moderately low resistivity Ohmic contacts on lightly doped n‐type c‐Si. The electrode, functionalized with nanoscale MgO<jats:italic><jats:sub>x</jats:sub></jats:italic> films, significantly enhances the performance of n‐type c‐Si solar cells to a power conversion efficiency of 20%, advancing n‐type c‐Si solar cells with full‐area dopant‐free rear contacts to a point of competitiveness with the standard p‐type architecture. The low thermal budget of the cathode formation, its dopant‐free nature, and the simplicity of the device structure enabled by the MgO<jats:italic><jats:sub>x</jats:sub></jats:italic>/Al contact open up new possibilities in designing and fabricating low‐cost optoelectronic devices, including solar cells, thin film transistors, or light emitting diodes.</jats:p>

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