300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant Technology
書誌事項
- 公開日
- 2012-10
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
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- 10.1109/led.2012.2210023
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 33 (10), 1438-1440, 2012-10
Institute of Electrical and Electronics Engineers (IEEE)