Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
説明
<jats:title>Abstract</jats:title><jats:p>Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (<jats:italic>h</jats:italic>-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an <jats:italic>h</jats:italic>-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.</jats:p>
収録刊行物
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- Scientific Reports
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Scientific Reports 6 (1), 2016-08-09
Springer Science and Business Media LLC