Raman-scattering study of the InGaN alloy over the whole composition range

DOI PDF 3 Citations
  • S. Hernández
    University of Stralhclyde Department of Physics, , Glasgow, G4 0NG, Scotland, United Kingdom
  • R. Cuscó
    Institut Jaume Almera , Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
  • D. Pastor
    Institut Jaume Almera , Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
  • L. Artús
    Institut Jaume Almera , Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain
  • K. P. O’Donnell
    University of Strathclyde Department of Physics, , Glasgow, G4 0NG, Scotland, United Kingdom
  • R. W. Martin
    University of Strathclyde Department of Physics, , Glasgow, G4 0NG, Scotland, United Kingdom
  • I. M. Watson
    University of Strathclyde Institute of Photonics, , Glasgow G4 0NW, Scotland, United Kingdom
  • Y. Nanishi
    Ritsumeikan University Department of Photonics, , 1-1-1 Noji-higashi, Kusatsu 525-8577, Japan
  • E. Calleja
    Instituto de Sistemas Optoelectrónicos y Microtecnologia (ISOM) and Departamento Ingeniería Electrónica, Escuela Técnica Superior de Ingenieros de (ETSI) Telecomunicación, , Ciudad Universitaria, 28040 Madrid, Spain

Abstract

<jats:p>We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.</jats:p>

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