21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane
説明
<jats:title>Abstract</jats:title><jats:p>We have fabricated the transparent bottom gate TFTs using Al and Sn‐doped zinc indium oxide (AT‐ZIO) as an active layer. The AT‐ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT‐ZIO TFT showed a field effect mobility of 15.6 cm<jats:sup>2</jats:sup>/Vs even before annealing. The mobility increased with increasing In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> content and post‐annealing temperature. The AT‐ZIO TFT exhibited afield effect mobility of 33 cm<jats:sup>2</jats:sup>/Vs, a sub‐threshold swing of 0.08 V/dec, and an on/off current ratio of more than 10<jats:sup>9</jats:sup> after Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> passivation and post‐annealing. We have fabricated AMOLED panels with the bottom gate AT‐ZIO TFT back‐plane successfully.</jats:p>
収録刊行物
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- SID Symposium Digest of Technical Papers
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SID Symposium Digest of Technical Papers 40 (1), 280-283, 2009-06
Wiley
