Through-Silicon Via (TSV)

書誌事項

公開日
2009-01
権利情報
  • https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
DOI
  • 10.1109/jproc.2008.2007462
公開者
Institute of Electrical and Electronics Engineers (IEEE)

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説明

Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV.

収録刊行物

  • Proceedings of the IEEE

    Proceedings of the IEEE 97 (1), 43-48, 2009-01

    Institute of Electrical and Electronics Engineers (IEEE)

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