Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

DOI PDF 被引用文献22件
  • S. Keller
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • N. A. Fichtenbaum
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • F. Wu
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • D. Brown
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • A. Rosales
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • S. P. DenBaars
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • J. S. Speck
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA
  • U. K. Mishra
    University of California Electrical and Computer Engineering Department, , Santa Barbara, California 93106, USA and Materials Department, , Santa Barbara, California 93106, USA

書誌事項

公開日
2007-10-15
DOI
  • 10.1063/1.2801406
公開者
AIP Publishing

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説明

<jats:p>Smooth, high quality N-polar GaN films were realized by metal organic chemical vapor deposition (MOCVD) through growth on misoriented (0001) sapphire substrates and the development of a high temperature nucleation process. Misorientation angles from 0.5° to 4° toward the a and the m plane of the sapphire substrate were investigated. Whereas GaN films grown on substrates with a misorientation angle of only 0.5° or 1° exhibited high densities of hexagonal surface features as commonly observed for N-polar GaN films grown by MOCVD, smooth GaN layers were obtained on sapphire substrates with misorientation angles of 2° or larger. In addition, the structural and optical properties of the GaN films significantly improved with increasing misorientation angle, as evaluated by high resolution x-ray diffraction, atomic force microscopy, transmission electron microscopy, and photoluminescence measurements. The properties of GaN layers grown on (0001) sapphire with a misorientation of 4° were comparable to Ga-polar GaN films grown in the same reactor.</jats:p>

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