Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
-
- Y. Xi
- The Future Chips Constellation, Department of Electrical , Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
-
- E. F. Schubert
- The Future Chips Constellation, Department of Electrical , Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
書誌事項
- 公開日
- 2004-09-20
- DOI
-
- 10.1063/1.1795351
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf∕dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the band-gap energy, and the effective density of states. Experimental results on the junction temperature of GaN ultraviolet light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage (dVf∕dT) is found. A linear relation between the junction temperature and the forward voltage is found.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 85 (12), 2163-2165, 2004-09-20
AIP Publishing