Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications
Journal
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 38 (9), 1220-1223, 2017-09
Institute of Electrical and Electronics Engineers (IEEE)
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Details 詳細情報について
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- CRID
- 1361981469624891136
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- ISSN
- 15580563
- 07413106
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- Data Source
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- Crossref