Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3
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AbstractA thermodynamic analysis on halide vapor-phase epitaxy of InN using InCl or InCl 3 as In sources is described. Theequilibrium partial pressures of gaseous species and the driving force for the deposition are calculated for growthtemperature. It is shown that the deposition of InN is very di†cult using InCl. On the contrary, by using InCl 3 , thedeposition is possible under a condition of inert carrier gas or mixed carrier gas of hydrogen and inert gas. In the InCl 3 system, hydrogen in the carrier gas plays a crucial role for the deposition of InN. These results agree well with theexperimental data reported in the literature. # 2001 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 81.10.Bk; 81.15.Kk; 05.70.yaKeywords: InN; Halide VPE; InCl; InCl 3 ; Thermodynamic analysis 1. IntroductionGroup III nitrides have attracted much atten-tion as materials for optoelectronic and high-temperature device applications. Among thesenitrides, In x Ga 1yx N is a key material for thefabrication of light emitters covering the wave-length from ultraviolet to red range. To date,however, the high-quality material of red rangehas not been obtained, because the epitaxialgrowth of InN is very di†cult probably due toits poor thermal stability and the lack of a suitablesubstrate material.In the previous papers [1,2], we showed experi-mentally that the vapor-phase epitaxy (VPE) ofInN was possible at the growth temperature ashigh as 7508C using InCl
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- Journal of Crystal Growth
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Journal of Crystal Growth 222 (1-2), 118-124, 2001-01
Elsevier BV