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- Jifeng Liu
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Jurgen Michel
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Wojciech Giziewicz
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Dong Pan
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Kazumi Wada
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Douglas D. Cannon
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Samerkhae Jongthammanurak
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- David T. Danielson
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Lionel C. Kimerling
- Massachusetts Institute of Technology Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139
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- Jian Chen
- Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science, , Cambridge, Massachusetts 02139
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- F. Ömer Ilday
- Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science, , Cambridge, Massachusetts 02139
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- Franz X. Kärtner
- Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science, , Cambridge, Massachusetts 02139
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- John Yasaitis
- Analog Devices, Inc. , Cambridge, Massachusetts 02139
説明
<jats:p>We demonstrate a high-performance, tensile-strained Ge p-i-n photodetector on Si platform with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz measured at λ=1040nm. The full bandwidth of the photodetector is achieved at a low reverse bias of 1 V, compatible with the low driving voltage requirements of Si ultralarge-scale integrated circuits. Due to the direct bandgap shrinkage induced by a 0.20% tensile strain in the Ge layer, the device covers the entire C band and a large part of the L band in telecommunications. The responsivities of the device at 850, 980, 1310, 1550, and 1605 nm are 0.55, 0.68, 0.87, 0.56, and 0.11A∕W, respectively, without antireflection coating. The internal quantum efficiency in the wavelength range of 650–1340 nm is over 90%. The entire device was fabricated using materials and processing that can be implemented in a standard Si complementary metal oxide semiconductor (CMOS) process flow. With high speed, a broad detection spectrum and compatibility with Si CMOS technology, this device is attractive for applications in both telecommunications and integrated optical interconnects.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 87 (10), 103501-, 2005-08-29
AIP Publishing