Temperature dependence of photoluminescence of <i>n</i>-InGaAsP
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- H. Temkin
- Bell Laboratories, Murray Hill, New Jersey 07974
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- V. G. Keramidas
- Bell Laboratories, Murray Hill, New Jersey 07974
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- M. A. Pollack
- Bell Laboratories, Murray Hill, New Jersey 07974
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- W. R. Wagner
- Bell Laboratories, Murray Hill, New Jersey 07974
Description
<jats:p>The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence (PL) of n-type InGaAsP is investigated. These layers, epitaxially grown on InP substrates, span the entire range of lattice matched compositions of the quaternary alloy. The spectral width of the PL emission and its temperature dependence are found not to vary with composition. However, compositional grading, especially evident at the center of the InGaAsP alloy range, often results in significant linewidth increase. These results are correlated with double crystal x-ray diffraction measurements. The experimental results are compared with predictions of van Roosbroeck–Shockley formalism.</jats:p>
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 52 (3), 1574-1578, 1981-03-01
AIP Publishing
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Details 詳細情報について
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- CRID
- 1361981469717472512
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- DOI
- 10.1063/1.329640
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- ISSN
- 10897550
- 00218979
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- Data Source
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- Crossref