Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

DOI PDF 被引用文献7件
  • K. Ismail
    IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598
  • S. F. Nelson
    IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598
  • J. O. Chu
    IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598
  • B. S. Meyerson
    IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598

書誌事項

公開日
1993-08-02
DOI
  • 10.1063/1.109949
公開者
AIP Publishing

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説明

<jats:p>We report electron transport properties of modulation-doped Si/SiGe at 300 and 77 K. Record mobilities of 2830 and 18 000 cm2/V s at 300 and 77 K, respectively, have been measured. Depending on the spacer layer thickness, the sheet resistance of the Si channel is in the range of 2000–10 000 Ω/⧠ at 300 K and 450–700 Ω/⧠ at 77 K. The low field electron drift velocity is 2–3 (5–10) times higher than the corresponding velocity measured in Si/SiO2 structures at 300 K (77 K). The saturation velocity is measured to be only 5% higher than in bulk Si, at both 300 and 77 K, but appears at a lower electric field. The effect of the enhanced transport properties in modulation-doped Si/SiGe on device design and performance is investigated.  </jats:p>

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