Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys

DOI PDF 被引用文献31件
  • R. Tsu
    Energy Conversion Devices, Incorporated, Troy, Michigan 48084
  • J. Gonzalez-Hernandez
    Energy Conversion Devices, Incorporated, Troy, Michigan 48084
  • S. S. Chao
    Energy Conversion Devices, Incorporated, Troy, Michigan 48084
  • S. C. Lee
    Energy Conversion Devices, Incorporated, Troy, Michigan 48084
  • K. Tanaka
    Energy Conversion Devices, Incorporated, Troy, Michigan 48084

書誌事項

公開日
1982-03-15
DOI
  • 10.1063/1.93133
公開者
AIP Publishing

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説明

<jats:p>We have used Raman scattering to deduce the volume fraction of crystallinity for the highly phosphorus-doped glow-discharge Si:F:H alloys. The measured critical volume fraction at the onset of rapidly increased conduction in this two-phase system of microcrystallites embedded in an amorphous matrix is 0.18. This value coincides with the theoretical percolation limit and serves to explain the conduction process in these two-phase materials which are useful as contacts in amorphous solar cells.</jats:p>

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